Y10S 148/00
Metal treatment
Y10S148/00 (Metal treatment) appears on 7,066 US grants and 354 published applications in this corpus.
Search patents in Y10S- Granted patents
- 7,066
- Published applications
- 354
- Assignees
- 1,119
- Inventors
- 9,124
- Latest grant
- 10 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 227 | 0 |
| 1977 | 175 | 0 |
| 1978 | 167 | 0 |
| 1979 | 128 | 0 |
| 1980 | 147 | 0 |
| 1981 | 125 | 0 |
| 1982 | 113 | 0 |
| 1983 | 71 | 0 |
| 1984 | 88 | 0 |
| 1985 | 134 | 0 |
| 1986 | 212 | 0 |
| 1987 | 235 | 0 |
| 1988 | 205 | 0 |
| 1989 | 315 | 0 |
| 1990 | 344 | 0 |
| 1991 | 413 | 0 |
| 1992 | 428 | 0 |
| 1993 | 480 | 0 |
| 1994 | 505 | 0 |
| 1995 | 499 | 0 |
| 1996 | 431 | 0 |
| 1997 | 386 | 0 |
| 1998 | 303 | 0 |
| 1999 | 257 | 0 |
| 2000 | 157 | 0 |
| 2001 | 114 | 25 |
| 2002 | 85 | 56 |
| 2003 | 59 | 42 |
| 2004 | 28 | 40 |
| 2005 | 31 | 31 |
| 2006 | 25 | 34 |
| 2007 | 15 | 13 |
| 2008 | 26 | 19 |
| 2009 | 20 | 25 |
| 2010 | 27 | 14 |
| 2011 | 29 | 3 |
| 2012 | 14 | 10 |
| 2013 | 3 | 4 |
| 2014 | 6 | 4 |
| 2015 | 8 | 2 |
| 2016 | 4 | 4 |
| 2017 | 1 | 7 |
| 2018 | 4 | 5 |
| 2019 | 7 | 0 |
| 2020 | 1 | 4 |
| 2021 | 2 | 4 |
| 2022 | 5 | 2 |
| 2023 | 5 | 1 |
| 2024 | 1 | 4 |
| 2025 | 0 | 0 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- Y10S 148/902Metal treatment: having portions of differing metallurgical properties or characteristics616
- Y10S 148/05Etch and refill429
- Y10S 148/012Bonding306
- Y10S 148/072Heterojunctions299
- Y10S 148/135Removal of substrate296
- Y10S 148/01Bipolar transistors-ion implantation274
- Y10S 148/011Bipolar transistors246
- Y10S 148/15Silicon on sapphire sos241
All 177 subgroupsShow fewer
- Y10S 148/051Etching225
- Y10S 148/02Contacts, special213
- Y10S 148/085Isolated-integrated213
- Y10S 148/106Masks, special204
- Y10S 148/095Laser devices193
- Y10S 148/093Laser beam treatment in general191
- Y10S 148/122Polycrystalline187
- Y10S 148/009Bi-mos185
- Y10S 148/147Silicides182
- Y10S 148/117Oxidation, selective180
- Y10S 148/126Power fets166
- Y10S 148/003Anneal152
- Y10S 148/026Deposition thru hole in mask148
- Y10S 148/082Ion implantation fets/coms146
- Y10S 148/014Capacitor145
- Y10S 148/019Contacts of silicides145
- Y10S 148/118Oxide films145
- Y10S 148/055Fuse132
- Y10S 148/065Gp iii-v generic compounds-processing129
- Y10S 148/053Field effect transistors fets119
- Y10S 148/169Vacuum deposition119
- Y10S 148/084Ion implantation of compound devices116
- Y10S 148/017Clean surfaces108
- Y10S 148/136Resistors104
- Y10S 148/09Laser anneal101
- Y10S 148/14Schottky barrier contacts100
- Y10S 148/131Reactive ion etching rie99
- Y10S 148/06Gettering96
- Y10S 148/10Lift-off masking96
- Y10S 148/124Polycrystalline emitter95
- Y10S 148/028Dicing93
- Y10S 148/105Masks, metal93
- Y10S 148/025Deposition multi-step91
- Y10S 148/097Lattice strain and defects91
- Y10S 148/141Self-alignment coat gate87
- Y10S 148/064Gp ii-vi compounds86
- Y10S 148/102Mask alignment85
- Y10S 148/043Dual dielectric83
- Y10S 148/024Defect control-gettering and annealing79
- Y10S 148/148Silicon carbide76
- Y10S 148/139Schottky barrier74
- Y10S 148/143Shadow masking74
- Y10S 148/133Reflow oxides and glasses73
- Y10S 148/116Oxidation, differential71
- Y10S 148/056Gallium arsenide70
- Y10S 148/091Laser beam processing of fets70
- Y10S 148/11Metal-organic cvd, ruehrwein type69
- Y10S 148/164Three dimensional processing69
- Y10S 148/114Nitrides of silicon64
- Y10S 148/16Superlattice64
- Y10S 148/151Simultaneous diffusion63
- Y10S 148/12Photocathodes-cs coated and solar cell62
- Y10S 148/015Capping layer61
- Y10S 148/113Nitrides of boron or aluminum or gallium60
- Y10S 148/111Narrow masking56
- Y10S 148/161Tapered edges54
- Y10S 148/088J-fet, i.e. junction field effect transistor53
- Y10S 148/123Polycrystalline diffuse anneal53
- Y10S 148/037Diffusion-deposition52
- Y10S 148/168V-grooves52
- Y10S 148/059Germanium on silicon or ge-si on iii-v50
- Y10S 148/004Annealing, incoherent light49
- Y10S 148/035Diffusion through a layer48
- Y10S 148/071Heating, selective47
- Y10S 148/145Shaped junctions47
- Y10S 148/006Apparatus46
- Y10S 148/018Compensation doping46
- Y10S 148/067Graded energy gap46
- Y10S 148/016Catalyst45
- Y10S 148/153Solar cells-implantations-laser beam45
- Y10S 148/061Gettering-armorphous layers44
- Y10S 148/07Guard rings and cmos44
- Y10S 148/099Led, multicolor44
- Y10S 148/163Thick-thin oxides44
- Y10S 148/041Doping control in crystal growth43
- Y10S 148/048Energy beam assisted epi growth42
- Y10S 148/092Laser beam processing-diodes or transistor41
- Y10S 148/119Phosphides of gallium or indium41
- Y10S 148/096Lateral transistor40
- Y10S 148/137Resists39
- Y10S 148/154Solid phase epitaxy39
- Y10S 148/158Sputtering39
- Y10S 148/04Dopants, special38
- Y10S 148/083Ion implantation, general38
- Y10S 148/094Laser beam treatment of compound devices38
- Y10S 148/159Strain gauges38
- Y10S 148/023Deep level dopants37
- Y10S 148/046Electron beam treatment of devices37
- Y10S 148/115Orientation37
- Y10S 148/138Roughened surface36
- Y10S 148/152Single crystal on amorphous substrate36
- Y10S 148/90Ion implanted34
- Y10S 148/058Ge germanium33
- Y10S 148/087I2l integrated injection logic33
- Y10S 148/103Mask, dual function33
- Y10S 148/162Testing steps33
- Y10S 148/033Diffusion of aluminum31
- Y10S 148/045Electric field31
- Y10S 148/057Gas flow control28
- Y10S 148/077Implantation of silicon on sapphire28
- Y10S 148/112Nitridation, direct, of silicon28
- Y10S 148/128Proton bombardment of silicon27
- Y10S 148/007Autodoping26
- Y10S 148/109Memory devices25
- Y10S 148/08Infrared24
- Y10S 148/073Hollow body23
- Y10S 148/086Isolated zones23
- Y10S 148/034Diffusion of boron or silicon22
- Y10S 148/03Diffusion21
- Y10S 148/063Gp ii-iv-vi compounds21
- Y10S 148/066Gp iii-v liquid phase epitaxy21
- Y10S 148/081Insulators19
- Y10S 148/125Polycrystalline passivation19
- Y10S 148/038Diffusions-staged18
- Y10S 148/167Two diffusions in one hole18
- Y10S 148/054Flat sheets-substrates17
- Y10S 148/104Mask, movable17
- Y10S 148/165Transmutation doping17
- Y10S 148/022Controlled atmosphere16
- Y10S 148/031Diffusion at an edge16
- Y10S 148/049Equivalence and options16
- Y10S 148/157Special diffusion and profiles16
- Y10S 148/174Zener diodes16
- Y10S 148/013Breakdown voltage15
- Y10S 148/107Melt15
- Y10S 148/901Surface depleted in an alloy component15
- Y10S 148/005Antimonides of gallium or indium14
- Y10S 148/101Liquid phase epitaxy, lpe14
- Y10S 148/144Shallow diffusion14
- Y10S 148/029Differential crystal growth rates13
- Y10S 148/149Silicon on iii-v13
- Y10S 148/039Displace p-n junction12
- Y10S 148/062Gold diffusion12
- Y10S 148/142Semiconductor-metal-semiconductor12
- Y10S 148/027Dichlorosilane11
- Y10S 148/042Doping, graded, for tapered etching11
- Y10S 148/079Inert carrier gas11
- Y10S 148/172Vidicons11
- Y10S 148/127Process induced defects10
- Y10S 148/036Diffusion, nonselective9
- Y10S 148/044Edge diffusion under mask9
- Y10S 148/076Implant9
- Y10S 148/156Sonos9
- Y10S 148/075Imide resists8
- Y10S 148/13Purification7
- Y10S 148/134Remelt7
- Y10S 148/021Continuous process6
- Y10S 148/089Josephson devices6
- Y10S 148/032Diffusion length5
- Y10S 148/068Graphite masking5
- Y10S 148/069Green sheets5
- Y10S 148/098Layer conversion5
- Y10S 148/108Melt back5
- Y10S 148/146Sheet resistance, dopant parameters5
- Y10S 148/002Amphoteric doping4
- Y10S 148/17Vapor-liquid-solid4
- Y10S 148/008Bi-level fabrication3
- Y10S 148/052Face to face deposition3
- Y10S 148/129Pulse doping3
- Y10S 148/155Solid solubility3
- Y10S 148/166Traveling solvent method3
- Y10S 148/047Emitter dip2
- Y10S 148/074Horizontal melt solidification2
- Y10S 148/078Impurity redistribution by oxidation2
- Y10S 148/132Recoil implantation2
- Y10S 148/173Washed emitter2
- Y10S 148/171Varistor1
- Y10S 148/001Amorphous semiconductor0
- Y10S 148/121Plastic temperature0
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Most cited
By later US patents
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Method for producing compound thin films1,267US 4,058,430 A1977
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers1,159US 5,278,100 AMicron Technology, Inc. · 1994
- Method for reducing, by a factor or 2.sup.-N, the minimum masking pitch of a photolithographic process1,059US 5,328,810 AMicron Technology, Inc. · 1994