Y10S 148/079
Inert carrier gas
Y10S148/079 (Inert carrier gas) appears on 11 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 11
- Published applications
- 0
- Assignees
- 6
- Inventors
- 16
- Latest grant
- 8 Jun 1982
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Sapphire single crystal substrate consisting essentially of Ga.sub.2 O.sub. 38 Jun 1982US 4,333,989 ASemiconductor Research Foundation
- Sapphire single crystal substrate for semiconductor devices29 Sep 1981US 4,292,373 ASemiconductor Research Foundation
- Sapphire single crystal substrate for semiconductor devices29 Sep 1981US 4,292,374 ASemiconductor Research Foundation
- Sapphire single crystal substrate for semiconductor devices21 Nov 1978US 4,126,731 ASemiconductor Research Foundation
- Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system15 Aug 1978US 4,106,959 ABell Telephone Laboratories, Incorporated
No published applications in this class yet.
Most cited
By later US patents
- Process for production of III-V compound crystals65US 4,010,045 A1977
- Method of producing epitaxially semiconductor layers20US 3,941,647 ASiemens Aktiengesellschaft · 1976
- Sapphire single crystal substrate for semiconductor devices18US 4,126,731 ASemiconductor Research Foundation · 1978
- Method of producing defectless epitaxial layer of gallium15US 3,984,263 AMatsushita Electric Industrial Co., Ltd. · 1976
- Process for production of III-V compound epitaxial crystals8US 3,975,218 ASemimetals, Inc. · 1976