Process for production of III-V compound epitaxial crystals
AssigneeSemimetals, Inc.
InventorRobert A. Ruehrwein
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Abstract
A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of an inert carrier gas with a gaseous trihalide of a Group III element and thereafter contacting that mixture with the same Group III element, the second mixture being formed by contacting a stream of an inert carrier gas with a Group V element or a volatile Group V compound.
Claims8
A process for the production and deposition of epitaxial layers comprised of compounds selected from the group consisting of the nitrides, phosphides, arsenides and antimonides of aluminum, gallium, indium and mixtures thereof, onto a substrate material the crystal lattice spacing of which is within about 40% of that of said compounds and being selected from the class consisting of I-VII, II-VI and III-V compounds, germanium and silicon, which comprises
- A. combining in the vapor phase, while excluding oxidizing gases, first and second separate gas streams,
- said first gas stream comprising an inert carrier gas and a gaseous mixture formed by the reaction in the absence of hydrogen of a Group III trihalide and a Group III element, said first gas stream being hydrogen-free;
- and
- said second gas stream comprising an inert carrier gas and a gaseous substance selected from the group consisting of a Group V element and a volatile Group V compound;
- and
- B. contacting the resulting reaction mixture with said substrate at a temperature within the range of from 135.degree. to 1500.degree.C. to deposit a single crystal form of at least one III-V compound as an epitaxial layer on said substrate.
Dependencies are inferred from the claim text.