Sapphire single crystal substrate for semiconductor devices
AssigneeSemiconductor Research Foundation
InventorsJun-ichi Nishizawa, Mitsuhiro Kimura
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Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and magnesium titanium oxide (MgTiO.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.
Claims15
A sapphire-containing rhombohedral single crystal substrate for epitaxial growth thereon of a layer of a semiconductor, said single crystal substrate being an electrically insulating material consisting essentially of MgTiO.sub.3 in an amount between 56 and 86 mol % with the balance being essentially Al.sub.2 O.sub.3, whereby the lattice misfit coefficient between said substrate and an epitaxially grown semiconductor thereon is not more than about 1% along the [1011] axis.
Dependencies are inferred from the claim text.