Sapphire single crystal substrate consisting essentially of Ga.sub.2 O.sub. 3
AssigneeSemiconductor Research Foundation
InventorsJun-Ichi Nishizawa, Kitsuhiro Kimura
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Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminum oxide) and at least one additive selected from a group consisting of oxides of gallium. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.
Claims3
A grown crystal structure comprising a sapphire-containing rhombohedral single-crystal electrically insulating substrate and an epitaxially grown semiconductor layer of silicon on said substrate, said single-crystal electrically insulating substrate consisting essentially of GA.sub.2 O.sub.3 in an amount of between 71 and 98 mol % with the balance being essentially Al.sub.2 O.sub.3, whereby the lattice misfit coefficient between said substrate and said epitaxially grown silicon layer is not more than about 1% along the axis of said substrate.
Dependencies are inferred from the claim text.