Process for production of III-V compound crystals
OwnerRobert A. Ruehrweininventor
Life of this patent
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Abstract
A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of an inert carrier gas with a gaseous trihalide of a Group III element and thereafter contacting that mixture with the same Group III element, the second mixture being formed by contacting a stream of an inert carrier gas with a Group V element or a volatile Group V compound.
Claims5
A process for the production of crystalline III-V compounds selected from the group consisting of the nitrides, phosphides, arsenides and antimonides of aluminum, gallium, indium, and mixtures thereof, which comprises combining in the vapor phase, while excluding oxidizing gases, first and second gas streams,
- said first gas stream comprising an inert carrier gas and a gaseous mixture formed by the reaction in the absence of hydrogen of a Group III trihalide and and a Group III element, said first gas stream being hydrogen-free;
- and
- said second gas stream comprising an inert carrier gas and a gaseous substance selected from the group consisting of a Group V element and a volatile Group V compound;
- thereby to obtain a crystalline form of at least one of said III-V compounds.
Dependencies are inferred from the claim text.