Sapphire single crystal substrate for semiconductor devices
AssigneesSemiconductor Research Foundation, Tohoku Metal Industries, Ltd.
InventorsJun-ichi Nishizawa, Mitsuhiro Kimura
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Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminium oxide) and at least one additive selected from a group consisting of oxides of gallium, titanium, scandium, and others. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.
Claims15
A sapphire-containing rhombohedral single crystal substrate for epitaxial growth thereon of a layer of a semiconductor, said single crystal substrate being an electrically insulating material consisting essentially of Ti.sub.2 O.sub.3 in an amount between 40 and 65 mol % with the balance being essentially Al.sub.2 O.sub.3, whereby the lattice misfit coefficient between said substrate and an epitaxially grown semiconductor thereon is not more than about 1% along the [1011] axis.
Dependencies are inferred from the claim text.