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Y10S 148/064

Gp ii-vi compounds

Official title: Gp II-VI compounds

Y10S148/064 (Gp ii-vi compounds) appears on 86 US grants and 0 published applications in this corpus.

Search patents in Y10S

Granted patents: 86
Published applications: 0
Assignees: 49
Inventors: 153
Latest grant: 2 Jan 2001

Filings by year

Y10S 148/064: granted patents and published applications per publication year
Year	Granted patents	Published applications
1976	6	0
1977	3	0
1978	4	0
1979	1	0
1980	0	0
1981	3	0
1982	1	0
1983	0	0
1984	0	0
1985	0	0
1986	5	0
1987	2	0
1988	2	0
1989	1	0
1990	9	0
1991	2	0
1992	4	0
1993	10	0
1994	10	0
1995	10	0
1996	5	0
1997	2	0
1998	2	0
1999	2	0
2000	1	0
2001	1	0

By publication year. Applications have been published since 2001.

Recent patents

Reduction of surface leakage current by surface passivation of CdZn Te and other materials using hyperthermal oxygen atoms2 Jan 2001US 6,168,967 AThe Regents of the University of California
Crystal growth method and apparatus31 Oct 2000US 6,139,631 AStanley Electric Co., Ltd.
Chemical vapor deposition of II/VI semiconductor material using triisopropylindium as a dopant16 Mar 1999US 5,882,805 AThe United States of America as represented by the Secretary of the Navy
Multi-layer structure for II-VI group compound semiconductor and method for forming the same23 Feb 1999US 5,874,349 ANEC Corporation
Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same10 Nov 1998US 5,834,361 ANEC Corporation

Most cited

By later US patents