Multi-layer structure for II-VI group compound semiconductor and method for forming the same
AssigneeNEC Corporation
InventorsKouichi Naniwae, Toru Suzuki
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Abstract
In a method of forming a II-VI compound semiconductor thin film on an InP substrate, a layer of III-V compound semiconductor mixed crystal is first formed on the InP substrate. The desorption rate of a group V element constituting the III-V compound semiconductor mixed crystal at a decomposition temperature of a native oxide layer formed on a surface of the III-V compound semiconductor mixed crystal layer is lower than a desorption rate of P of the InP substrate at a decomposition temperature of a native oxide layer formed on a surface of the InP substrate. A II-VI compound semiconductor thin film layer is formed on the first III-V compound semiconductor mixed crystal layer.
Claims6
A method of forming a II-VI compound semiconductor thin film, comprising the steps of:
- providing an InP substrate;
- forming a layer of III-V compound semiconductor mixed crystal on said InP substrate, wherein a desorption rate of a group V element constituting said III-V compound semiconductor mixed crystal at a decomposition temperature of a native oxide layer formed on a surface of said III-V compound semiconductor mixed crystal layer is lower than a desorption rate of P of said InP substrate at a decomposition temperature of a native oxide layer formed on a surface of said InP substrate;
- and
- forming a II-VI compound semiconductor thin film formed on said first III-V compound semiconductor mixed crystal layer.
Dependencies are inferred from the claim text.