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US 5,306,662 AGranted
Method of manufacturing P-type compound semiconductor
AssigneeNichia Chemical Industries, Ltd.
InventorsShuji Nakamura, Naruhito Iwasa, Masayuki Senoh
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Abstract
A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400.degree. C. or higher, or irradiating electron beam the grown compound at 600.degree. C. or higher.
Claims8
A method of manufacturing a p-type III-V nitride compound semiconductor by a vapor phase epitaxy method, comprising the steps of:
- growing a III-V nitride compound semiconductor by using a reaction gas containing a p-type impurity;
- and
- annealing said nitride compound semiconductor at a temperature above 400.degree. C.
Dependencies are inferred from the claim text.