Chemical vapor deposition of II/VI semiconductor material using triisopropylindium as a dopant
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsKelvin T. Higa, Robert W. Gedridge, Jr., Ralph Korenstein, Stuart JC. Irvine
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Abstract
Triisopropylindium ((CH.sub.3).sub.2 CH).sub.3 In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 10.sup.15 cm.sup.-3 and does not exhibit an appreciable memory effect.
Claims13
A process for indium doping of a Group II/Group VI semiconductor material by chemical vapor deposition wherein the indium source is triisopropylindium.
A process for indium doping a Group II/Group VI semiconductor material by chemical vapor deposition which comprises reacting triisopropylindium and one or more sources of a Group II material and one or more sources of a Group VI material by chemical vapor deposition at a temperature sufficiently high to at least partially decompose the triisopropylindium and said Group II and said Group VI source materials, and depositing said Group II/Group VI semiconductor materials on a semiconductor substrate such that minimal indium memory doping occurs.
Dependencies are inferred from the claim text.