Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same
AssigneeNEC Corporation
InventorsKouichi Naniwae, Toru Suzuki
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Abstract
In a method of forming a II-VI compound semiconductor thin film on an InP substrate, a layer of III-V compound semiconductor mixed crystal is first formed on the InP substrate. The desorption rate of a group V element constituting the III-V compound semiconductor mixed crystal at a decomposition temperature of a native oxide layer formed on a surface of the III-V compound semiconductor mixed crystal layer is lower than a desorption rate of P of the InP substrate at a decomposition temperature of a native oxide layer formed on a surface of the InP substrate. A II-VI compound semiconductor thin film layer is formed on the first III-V compound semiconductor mixed crystal layer.
Claims12
A multi-layer structure for a II-VI compound semiconductor thin film, comprising:
- an InP substrate;
- a first layer of III-V compound semiconductor mixed crystal formed on said InP substrate, and said first layer of a III-V compound semiconductor mixed crystal being devoid of InP, wherein a desorption rate of a group V element constituting said III-V compound semiconductor mixed crystal at a decomposition temperature of a native oxide layer formed on a surface of said first layer being lower than a desorption rate of P of said InP substrate at a decomposition temperature of a native oxide layer formed on a surface of said InP substrate, whereby said first layer preventing generation of liquid droplets of a group III element constituting said III-V compound semiconductor mixed crystal on said first layer during decomposition of said native oxide layer formed on said surface of said first layer;
- and
- a second layer of II-VI group compound semiconductor thin film formed on said first layer.
A method of forming a multi-layer structure for a II-VI compound semiconductor thin film, comprising the steps of:
- providing an InP substrate having a native oxide formed on a surface of said InP substrate;
- forming a first layer of III-V compound semiconductor mixed crystal devoid of InP on said InP substrate, wherein said first layer has a native oxide formed on surface of said first layer, wherein a desorption rate of a group V element constituting said III-V compound semiconductor mixed crystal at a decomposition temperature of said native oxide layer formed on said surface of said first layer being lower than a desorption rate of P of said InP substrate at a decomposition temperature of said native oxide layer formed on said surface of said InP substrate;
- thermally decomposing said native oxide layer formed on said first layer, whereby said first layer prevents generation of liquid droplets of a group III element constituting said III-V compound semiconductor mixed crystal on said first layer during said decomposing step;
- and
- forming a second layer of II-VI group compound semiconductor thin film on said first layer.
Dependencies are inferred from the claim text.