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US 5,468,678 AGranted
Method of manufacturing P-type compound semiconductor
AssigneeNichia Chemical Industries, Ltd.
InventorsShuji Nakamura, Naruhito Iwasa, Masayuki Senoh
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Abstract
A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400.degree. C. or higher, or irradiating electron beam the grown compound at 600.degree. C. or higher.
Claims8
A method of manufacturing a p-type II-VI compound semiconductor by a vapor phase epitaxy method, comprising the steps of:
- growing a II-VI compound semiconductor by introducing a reaction gas containing a hydrogen compound of a p-type impurity;
- and
- annealing said II-VI compound semiconductor at a temperature of not less than 300.degree. C. and less than 700.degree. C. to remove hydrogen atoms from the II-VI compound semiconductor.
A method of manufacturing a p-type II-VI compound semiconductor by a vapor phase epitaxy method, comprising the steps of:
- growing a II-VI compound semiconductor by introducing a reaction gas containing a hydrogen compound of a p-type impurity;
- and
- annealing said II-VI compound semiconductor without a cap layer at a temperature of not less than 300.degree. C. and less than 700.degree. C. to remove hydrogen atoms from the II-VI compound semiconductor.
Dependencies are inferred from the claim text.