Y10S 148/026
Deposition thru hole in mask
Y10S148/026 (Deposition thru hole in mask) appears on 148 US grants and 2 published applications in this corpus.
Search patents in Y10S- Granted patents
- 148
- Published applications
- 2
- Assignees
- 53
- Inventors
- 264
- Latest grant
- 7 Dec 2010
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 7 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 6 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 8 | 0 |
| 1986 | 9 | 0 |
| 1987 | 6 | 0 |
| 1988 | 10 | 0 |
| 1989 | 8 | 0 |
| 1990 | 22 | 0 |
| 1991 | 17 | 0 |
| 1992 | 13 | 0 |
| 1993 | 7 | 0 |
| 1994 | 6 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Multilayer film with stack of nanometer-scale thicknesses7 Dec 2010US 7,847,368 B2Hewlett-Packard Development Company, L. P.
- Method of forming multilayer film20 May 2008US 7,375,012 B2
- Method of fabricating semiconductor7 Sep 1999US 5,950,081 AWinbond Electronics Corp.
- Method of producing a semiconductor on insulating substrate, and a method of forming transistor thereon16 Sep 1997US 5,668,046 ANEC Corporation
- Method for producing a semiconductor laser device5 Nov 1996US 5,571,750 ASharp Kabushiki Kaisha
Most cited
By later US patents
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988
- Selective deposition of amorphous and polycrystalline silicon345US 4,963,506 AMotorola, Inc. · 1990
- Monolithic integration of silicon and gallium arsenide devices178US 4,774,205 AMassachusetts Institute of Technology · 1988
- Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers135US 4,663,831 AMotorola, Inc. · 1987
- Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs114US 4,551,394 AHoneywell Inc. · 1985