US 4,551,394 AGranted

Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs

AssigneeHoneywell Inc.

InventorsRegis J. Betsch, Michael S. Liu, Obert N. Tufte

Life of this patent

Estimating the term…

Loading patent…

Abstract

Localized epitaxial growth of GaAs from a silicon monocrystalline substrate to provide a three-dimensional Si-GaAs structure and method. The silicon has an insulating layer deposited thereover and a window is opened through the layer to expose a small area of the underlying silicon from which silicon is epitaxially grown until the window is nearly full whereupon a thin buffer layer such as germanium is epitaxially grown over the epi-silicon to fill the window. Al.sub.x Ga.sub.1-x As (where x.gtoreq.0) is then locally epitaxially grown from the buffer layer and it grows laterally as well as vertically to cover the surrounding insulating layer surface and provide a site for high frequency electronics.

Claims5

Dependent claims

A Si-GaAs integrated electronic structure by localized epitaxial growth comprising:

a monocrystalline silicon substrate having a planar surface coated with an insulating layer;
said insulating layer having a window down through the layer to the silicon surface thereby exposing a portion of the silicon surface;
an epitaxially-grown monocrystalline silicon island grown from said surface portion and filling said window substantially to the upper surface of the insulating layer;
an epitaxially-grown monocrystalline thin-film buffer layer grown from and over the surface of said silicon island;
an epitaxially-grown monocrystalline layer of Al.sub.x Ga.sub.1-x As (where x.gtoreq.0) grown from said buffer layer which layer of Al.sub.x Ga.sub.1-x As extends horizontally from the island over the surface of the insulating layer adjacent said window.

2 more elements

Dependencies are inferred from the claim text.