Method for producing a semiconductor laser device

A method for producing a semiconductor laser device in which a substrate with a layered structure for light emitting is cleaved into a plurality of bars, the layered structure including an active layer, and the bars are cut into chips, comprising the steps of:

• forming window layers on light-emitting end facets of the bars;
• holding the bars with the window layers into a holding and masking means for masking the window layers and portions of top surfaces and reverse surfaces of the bars, the portions being adjacent to the window layers, and for fixing the bars therewith, and forming the electrodes on the remaining portions of the top surfaces and the reverse surfaces of the bars under the condition that the bars are kept in the holding and masking means without being disassembled through the electrodes forming process;
• and
• cutting the bars on which the electrodes are formed into the chips, wherein the holding and masking means comprises a first member, a second member, and third bar members, each of the third members having first projections on two parallel side faces to form grooves in the side faces, and the bars and the third bar members are alternately placed between the first and second members so that the window layers and the portions adjacent to the window layers of the bars are inserted in the groove of the third bar members.

A method for producing a semiconductor laser device in which a substrate with a layered structure for light emitting is cleaved into a plurality of bars, the layered structure including an active layer, and the bars are cut into chips, comprising the steps of:

• forming window layers on light-emitting end facets of the bars and on one of a top surface of the layered structure and a reverse surface of the substrate;
• forming a reflection film and/or an anti-reflection film on the light-emitting end facets;
• removing the window layer formed on one of the top surface of the layered structure and the reverse surface of the substrate by selectively etching the window layers using the reflection film and/or the anti-reflection film as a mask;
• holding the bars with the window layer separately into a holding and masking means for masking the window layers and portions of top surfaces and reverse surfaces of the bars, the portions being adjacent to the window layers, and for fixing the bars therewith, and forming the electrodes on the remaining portions of the top surfaces and the reverse surfaces of the bars under the condition that the bars are kept in the holding and masking means without being disassembled through the electrodes forming process;
• and
• cutting the bars on which the electrodes are formed into the chips.

A method for producing a semiconductor laser device comprising the steps of:

• cleaving a substrate with a layered structure including an active layer for a light emission into a plurality of bars, the bars each having a top surface, a reverse surface and light-emitting end facets;
• covering the light-emitting end facets of the bars with window layers;
• holding the bars by sandwiching edge portions of the top surface and the reverse surface of each of the bars directly by a means for masking the window layers;
• forming electrodes on exposed portions of the top surface and the reverse surface of each of the bars, by using a thin film deposition method, with the window layers masked by the masking means;
• removing the masking means from the bars;
• and
• cutting the bars into a plurality of chips.