Y10S 148/037
Diffusion-deposition
Y10S148/037 (Diffusion-deposition) appears on 52 US grants and 0 published applications in this corpus.
Search patents in Y10S- Granted patents
- 52
- Published applications
- 0
- Assignees
- 26
- Inventors
- 82
- Latest grant
- 15 May 2001
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 21 | 0 |
| 1977 | 7 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 0 | 0 |
| 1992 | 4 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Doping process for producing homojunctions in semiconductor substrates15 May 2001US 6,232,207 B1Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Method of fabricating integrated circuits with oxidized isolation25 Jul 2000US 6,093,620 ANational Semiconductor Corporation
- Doping method of barrier region in semiconductor device16 Aug 1994US 5,338,697 ASeiko Instruments Inc.
- Method of forming shallow junctions2 Feb 1993US 5,183,777 AFujitsu Limited
- Method of boron diffusion into semiconductor wafers having reduced stacking faults15 Dec 1992US 5,171,708 AShin-Etsu Handotai Co., Ltd.
No published applications in this class yet.
Most cited
By later US patents
- Method of gettering using backside polycrystalline silicon107US 4,053,335 AInternational Business Machines Corporation · 1977
- Single IGFET memory cell with buried storage element43US 4,003,036 AAmerican Micro-Systems, Inc. · 1977
- Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer38US 4,532,700 AInternational Business Machines Corporation · 1985
- Low capacitance V groove MOS NOR gate and method of manufacture36US 3,975,221 AAmerican Micro-Systems, Inc. · 1976
- Epitaxial method of fabricating single IGFET memory cell with buried storage element35US 4,105,475 AAmerican Microsystems, Inc. · 1978