H10B
Electronic memory devices
H10B (Electronic memory devices) appears on 67,696 US grants and 73,588 published applications in this corpus.
Search patents in H10B- Granted patents
- 67,696
- Published applications
- 73,588
- Assignees
- 2,819
- Inventors
- 42,801
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 30 | 0 |
| 1977 | 40 | 0 |
| 1978 | 57 | 0 |
| 1979 | 52 | 0 |
| 1980 | 83 | 0 |
| 1981 | 67 | 0 |
| 1982 | 73 | 0 |
| 1983 | 81 | 0 |
| 1984 | 62 | 0 |
| 1985 | 83 | 0 |
| 1986 | 69 | 0 |
| 1987 | 122 | 0 |
| 1988 | 101 | 0 |
| 1989 | 159 | 0 |
| 1990 | 182 | 0 |
| 1991 | 293 | 0 |
| 1992 | 294 | 0 |
| 1993 | 347 | 0 |
| 1994 | 480 | 0 |
| 1995 | 553 | 0 |
| 1996 | 561 | 0 |
| 1997 | 632 | 0 |
| 1998 | 873 | 0 |
| 1999 | 1063 | 0 |
| 2000 | 1284 | 0 |
| 2001 | 1631 | 647 |
| 2002 | 1505 | 1619 |
| 2003 | 1607 | 1644 |
| 2004 | 1778 | 2129 |
| 2005 | 1559 | 2347 |
| 2006 | 1679 | 2427 |
| 2007 | 1496 | 2379 |
| 2008 | 1483 | 2503 |
| 2009 | 1553 | 2251 |
| 2010 | 2092 | 2206 |
| 2011 | 2043 | 2187 |
| 2012 | 1958 | 2342 |
| 2013 | 2303 | 2282 |
| 2014 | 2572 | 2429 |
| 2015 | 2511 | 2586 |
| 2016 | 2706 | 2573 |
| 2017 | 2620 | 2540 |
| 2018 | 2363 | 2391 |
| 2019 | 2718 | 3091 |
| 2020 | 3119 | 3913 |
| 2021 | 3130 | 3995 |
| 2022 | 2922 | 4455 |
| 2023 | 3161 | 4920 |
| 2024 | 3401 | 4824 |
| 2025 | 3552 | 4843 |
| 2026 | 2593 | 4065 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Main groups
Granted patents with any code in the group
- H10B 12/00Dynamic random access memory [dram] devices19,534
- H10B 41/00Electrically erasable-and-programmable rom [eeprom] devices comprising floating gates16,867
- H10B 43/00Eeprom devices comprising charge-trapping gate insulators13,829
- H10B 63/00Resistance change memory devices9,102
- H10B 69/00Erasable-and-programmable rom [eprom] devices not provided for in groups h10b41/00 - h10b63/007,319
- H10B 61/00Magnetic memory devices6,951
- H10B 10/00Static random access memory [sram] devices6,030
- H10B 53/00Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors2,990
All 12 main groupsShow fewer
- H10B 20/00Read-only memory [rom] devices2,937
- H10B 51/00Ferroelectric ram [feram] devices comprising ferroelectric memory transistors1,505
- H10B 99/00Subject matter not provided for in other groups of this subclass828
- H10B 80/00Assemblies of multiple devices comprising at least one memory device covered by578
Recent patents
- Integrated circuit package and method of manufacturing the same6 Oct 2026US 12,754,862 B2SK hynix Inc.
- Fe-x templating layers for growth of perpendicularly magnetized Heusler films on top of a tunnel barrier6 Oct 2026US 12,755,770 B2Samsung Electronics Co., Ltd.
- Memory devices with RC tracking and methods for operating the same6 Oct 2026US 12,755,780 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices for implementing read operation of bidirectional selector only memory (SOM) cells6 Oct 2026US 12,755,784 B2Samsung Electronics Co., Ltd.
- Address fault detection in a memory system6 Oct 2026US 12,755,788 B2Silicon Storage Technology, Inc.
- Spacer film scheme form polarization improvement8 Oct 2026US 2026/0311724 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device and method for manufacturing the same8 Oct 2026US 2026/0311729 A1Macronix International Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Hbm power up protection scheme design8 Oct 2026US 2026/0311738 A1Micron Technology, Inc.
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Three dimensional structure memory1,560US 5,915,167 AElm Technology Corporation · 1999
- Contact plugs in SRAM cells and the method of forming the same1,465US 9,236,300 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016