H10B 43/00
Eeprom devices comprising charge-trapping gate insulators
Official title: EEPROM devices comprising charge-trapping gate insulators
H10B43/00 (Eeprom devices comprising charge-trapping gate insulators) appears on 13,829 US grants and 17,778 published applications in this corpus.
Search patents in H10B- Granted patents
- 13,829
- Published applications
- 17,778
- Assignees
- 575
- Inventors
- 10,752
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 8 | 0 |
| 2001 | 20 | 5 |
| 2002 | 46 | 47 |
| 2003 | 66 | 103 |
| 2004 | 104 | 152 |
| 2005 | 119 | 186 |
| 2006 | 168 | 242 |
| 2007 | 140 | 275 |
| 2008 | 138 | 290 |
| 2009 | 162 | 309 |
| 2010 | 248 | 341 |
| 2011 | 321 | 358 |
| 2012 | 316 | 394 |
| 2013 | 378 | 445 |
| 2014 | 518 | 574 |
| 2015 | 603 | 684 |
| 2016 | 782 | 826 |
| 2017 | 831 | 905 |
| 2018 | 721 | 745 |
| 2019 | 828 | 1016 |
| 2020 | 1067 | 1313 |
| 2021 | 1083 | 1540 |
| 2022 | 1017 | 1569 |
| 2023 | 1085 | 1552 |
| 2024 | 1198 | 1507 |
| 2025 | 1102 | 1333 |
| 2026 | 738 | 1067 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10B 43/20Eeprom devices comprising charge-trapping gate insulators: characterised by three-dimensional [3d] arrangements10,461
- H10B 43/30Eeprom devices comprising charge-trapping gate insulators: characterised by the memory core region7,612
- H10B 43/10Eeprom devices comprising charge-trapping gate insulators: characterised by the top-view layout4,565
- H10B 43/40Eeprom devices comprising charge-trapping gate insulators: characterised by the peripheral circuit region4,106
- H10B 43/50Eeprom devices comprising charge-trapping gate insulators: characterised by the boundary region between3,283
Recent patents
- Control gate signal for data retention in nonvolatile memory6 Oct 2026US 12,755,789 B2SanDisk Technologies LLC
- Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same6 Oct 2026US 12,757,392 B2SanDisk Technologies LLC
- Memory array and method used in forming a memory array comprising strings of memory cells6 Oct 2026US 12,757,393 B2Micron Technology, Inc.
- Method for manufacturing oxide film, method for manufacturing semiconductor memory device, semiconductor device, and semiconductor memory device6 Oct 2026US 12,757,396 B2Kioxia Corporation
- Semiconductor memory device and method of manufacturing the semiconductor memory device6 Oct 2026US 12,757,397 B2SK hynix Inc.
- Memory device and method for manufacturing the same8 Oct 2026US 2026/0311729 A1Macronix International Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Memory structure, memory device and operating method thereof8 Oct 2026US 2026/0311763 A1Macronix International Co., Ltd.
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
Most cited
By later US patents
- Vertical-type non-volatile memory devices657US 7,679,133 B2Samsung Electronics Co., Ltd. · 2010
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Non-volatile memory device, erasing method thereof, and memory system including the same608US 8,553,466 B2Samsung Electronics Co., Ltd. · 2013
- Methods for depositing silicon oxide501US 9,685,320 B2Lam Research Corporation · 2017
- Integrated circuits having a contact region and methods for manufacturing the same490US 7,915,667 B2Qimonda AG · 2011