H10B 43/30
Eeprom devices comprising charge-trapping gate insulators: characterised by the memory core region
Official title: characterised by the memory core region
H10B43/30 (Eeprom devices comprising charge-trapping gate insulators: characterised by the memory core region) appears on 7,612 US grants and 9,403 published applications in this corpus.
Search patents in H10B- Granted patents
- 7,612
- Published applications
- 9,403
- Assignees
- 407
- Inventors
- 6,764
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 7 | 0 |
| 2001 | 20 | 5 |
| 2002 | 45 | 47 |
| 2003 | 64 | 99 |
| 2004 | 104 | 150 |
| 2005 | 118 | 185 |
| 2006 | 166 | 235 |
| 2007 | 135 | 261 |
| 2008 | 131 | 269 |
| 2009 | 150 | 244 |
| 2010 | 218 | 200 |
| 2011 | 237 | 182 |
| 2012 | 194 | 191 |
| 2013 | 191 | 214 |
| 2014 | 257 | 300 |
| 2015 | 309 | 368 |
| 2016 | 452 | 470 |
| 2017 | 483 | 522 |
| 2018 | 442 | 474 |
| 2019 | 515 | 632 |
| 2020 | 636 | 714 |
| 2021 | 563 | 702 |
| 2022 | 454 | 598 |
| 2023 | 451 | 542 |
| 2024 | 475 | 650 |
| 2025 | 452 | 568 |
| 2026 | 324 | 581 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same6 Oct 2026US 12,757,392 B2SanDisk Technologies LLC
- Memory array and method used in forming a memory array comprising strings of memory cells6 Oct 2026US 12,757,393 B2Micron Technology, Inc.
- Method for manufacturing oxide film, method for manufacturing semiconductor memory device, semiconductor device, and semiconductor memory device6 Oct 2026US 12,757,396 B2Kioxia Corporation
- Three-dimensional semiconductor memory device, electronic system including the same, and method of fabricating the same6 Oct 2026US 12,757,402 B2Samsung Electronics Co., Ltd.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,711 B2Samsung Electronics Co., Ltd.
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
- Flash memory with improved gate structure and a method of creating the same8 Oct 2026US 2026/0313891 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with aligned channel structures and gate contact structures8 Oct 2026US 2026/0313896 A1Samsung Electronics Co., Ltd.
- Microelectronic devices, and related methods and memory devices8 Oct 2026US 2026/0313897 A1Micron Technology, Inc.
Most cited
By later US patents
- Vertical-type non-volatile memory devices657US 7,679,133 B2Samsung Electronics Co., Ltd. · 2010
- Non-volatile memory device, erasing method thereof, and memory system including the same608US 8,553,466 B2Samsung Electronics Co., Ltd. · 2013
- Integrated circuits having a contact region and methods for manufacturing the same490US 7,915,667 B2Qimonda AG · 2011
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Method of fabricating a charge-trapping gate stack using a CMOS process flow478US 8,993,457 B1Cypress Semiconductor Corporation · 2015