Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same

A memory device, comprising:

• an alternating stack of insulating layers and electrically conductive layers arranged along a vertical direction;
• a memory opening vertically extending through the alternating stack;
• and
• a memory opening fill structure located in the memory opening and comprising a vertical semiconductor channel and a memory film,
• wherein:
• the memory film comprises a blocking dielectric film, a tunneling dielectric layer and a vertical stack of memory elements located between the blocking dielectric film and the tunneling dielectric layer;
• and
• the blocking dielectric film comprises component layers which comprise, from a side that is proximal to the vertical stack of memory elements toward a side that is distal from the vertical stack of memory elements, an inner dielectric metal oxide blocking dielectric layer, an inner silicon oxide blocking dielectric layer, a middle dielectric metal oxide blocking dielectric layer, an outer silicon oxide blocking dielectric layer, and an outer dielectric metal oxide blocking dielectric layer, wherein:
• a first electric dipole interface is located between the outer silicon oxide blocking dielectric layer and the middle dielectric metal oxide blocking dielectric layer, and has a first dipole moment pointing inward from the outer silicon oxide blocking dielectric layer toward the middle dielectric metal oxide blocking dielectric layer;
• and
• a second electric dipole interface is located between the inner silicon oxide blocking dielectric layer and the inner dielectric metal oxide blocking dielectric layer, and has a second dipole moment pointing inward from the inner silicon oxide blocking toward the inner dielectric metal oxide blocking dielectric layer.