Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials

An integrated assembly, comprising:

• a first tier, comprising:
• a conductive expanse;
• a stack over the conductive expanse;
• one or more conductive nodes under the conductive expanse, wherein the one or more conductive nodes comprise a first composition;
• one or more openings extending vertically through the stack, wherein the one or more openings are lined with respective insulative material liners;
• and
• one or more pillar structures extending vertically through the one or more openings, wherein the one or more pillar structures comprises respective posts of conductive material laterally surrounded by the respective insulative material liners, wherein at least one post of the respective posts extends through the conductive expanse and partially penetrates into a conductive node of the one or more conductive nodes;
• and
• a second tier, wherein the second tier comprises circuitry electrically coupled to the one or more conductive nodes of the first tier.

A memory device, comprising:

• an integrated assembly, comprising:
• a conductive expanse;
• a stack over the conductive expanse;
• one or more conductive nodes under the conductive expanse, wherein the one or more conductive nodes comprise a first composition;
• one or more openings extending vertically through the stack, wherein the one or more openings are lined with respective insulative material liners;
• and
• one or more pillar structures extending vertically through the one or more openings, wherein the one or more pillar structures comprises respective posts of conductive material laterally surrounded by the respective insulative material liners, wherein at least one post of the respective posts extends through the conductive expanse and partially penetrates into a conductive node of the one or more conductive nodes.