H10B 43/35
With cell select transistors
Official title: with cell select transistors, e.g. NAND
H10B43/35 (With cell select transistors) appears on 4,864 US grants and 6,309 published applications in this corpus.
Search patents in H10B- Granted patents
- 4,864
- Published applications
- 6,309
- Assignees
- 190
- Inventors
- 4,642
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 1 |
| 2006 | 3 | 4 |
| 2007 | 1 | 2 |
| 2008 | 2 | 4 |
| 2009 | 5 | 16 |
| 2010 | 8 | 14 |
| 2011 | 10 | 23 |
| 2012 | 21 | 75 |
| 2013 | 50 | 136 |
| 2014 | 132 | 179 |
| 2015 | 200 | 269 |
| 2016 | 330 | 390 |
| 2017 | 404 | 431 |
| 2018 | 355 | 392 |
| 2019 | 426 | 526 |
| 2020 | 542 | 606 |
| 2021 | 471 | 615 |
| 2022 | 392 | 529 |
| 2023 | 391 | 478 |
| 2024 | 422 | 591 |
| 2025 | 399 | 496 |
| 2026 | 300 | 530 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same6 Oct 2026US 12,757,392 B2SanDisk Technologies LLC
- Memory array and method used in forming a memory array comprising strings of memory cells6 Oct 2026US 12,757,393 B2Micron Technology, Inc.
- Method for manufacturing oxide film, method for manufacturing semiconductor memory device, semiconductor device, and semiconductor memory device6 Oct 2026US 12,757,396 B2Kioxia Corporation
- Three-dimensional semiconductor memory device, electronic system including the same, and method of fabricating the same6 Oct 2026US 12,757,402 B2Samsung Electronics Co., Ltd.
- Semiconductor device and electronic system including the same6 Oct 2026US 12,757,711 B2Samsung Electronics Co., Ltd.
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
- Semiconductor device with aligned channel structures and gate contact structures8 Oct 2026US 2026/0313896 A1Samsung Electronics Co., Ltd.
- Method for Forming a Memory Structure for a 3D NAND Flash Memory8 Oct 2026US 2026/0313900 A1
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Non-volatile memory device, erasing method thereof, and memory system including the same608US 8,553,466 B2Samsung Electronics Co., Ltd. · 2013
- 3D stacked multilayer semiconductor memory using doped select transistor channel473US 10,090,316 B2ASM IP Holding B. V. · 2018
- Semiconductor device and method of manufacturing the same473US 8,710,580 B2Kabushiki Kaisha Toshiba · 2014
- Method of processing a substrate and a device manufactured by using the method455US 10,134,757 B2ASM IP Holding B. V. · 2018
- Ultrahigh density monolithic, three dimensional vertical NAND memory device275US 8,349,681 B2SanDisk Technologies LLC · 2013