141,560 results
- US 2026/0324523 A1Published 15 Oct 2026Semiconductor package including support wire
Samsung Electronics Co., Ltd.
- US 2026/0324515 A1Published 15 Oct 2026Three-dimensional semiconductor memory device with overlapping contacts, and electronic system including the same
Samsung Electronics Co., Ltd.
- US 2026/0324498 A1Published 15 Oct 2026Memory devices and manufacturing method of the same
SK hynix Inc.
- US 2026/0324497 A1Published 15 Oct 2026Semiconductor package structure with stiffener mold and method of forming the same
Taiwan Semiconductor Manufacturing Company, Ltd.
- US 2026/0324472 A1Published 15 Oct 2026Semiconductor package including noise reducing structure
Samsung Electronics Co., Ltd.
- US 2026/0324467 A1Published 15 Oct 2026Electronic package structure and method for manufacturing the same
Advanced Semiconductor Engineering, Inc.
- US 2026/0324461 A1Published 15 Oct 2026
- US 2026/0324459 A1Published 15 Oct 2026Glass substrate device with embedded components
Intel Corporation
- US 2026/0324429 A1Published 15 Oct 2026Managing heat dissipation structures
Yangtze Memory Technologies Co., Ltd.
- US 2026/0324422 A1Published 15 Oct 2026Thermal interface material including a multi-layer structure and methods of forming the same
Taiwan Semiconductor Manufacturing Company, Ltd.
- US 2026/0324418 A1Published 15 Oct 2026Semiconductor package
Samsung Electronics Co., Ltd.
- US 2026/0324406 A1Published 15 Oct 2026Memory device including control gates having tungsten structure
Micron Technology, Inc.
- US 2026/0324405 A1Published 15 Oct 2026Hybrid device with backside power delivery networks and associated systems and methods
Micron Technology, Inc.
- US 2026/0324399 A1Published 15 Oct 2026Memory device and method of manufacturing a memory device
Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- US 2026/0324388 A1Published 15 Oct 20263d semiconductor devices and structures with cpu and memory stack
Monolithic 3D Inc.
- US 2026/0324358 A1Published 15 Oct 2026
- US 2026/0324329 A1Published 15 Oct 2026Semiconductor device and method of forming thereof
Yangtze Memory Technologies Co., Ltd.
- US 2026/0324317 A1Published 15 Oct 2026Methods to control delta bow of 3d nand onon stack
Applied Materials, Inc.
- US 2026/0324304 A1Published 15 Oct 2026
- US 2026/0324300 A1Published 15 Oct 2026Method for forming a memory device at a backside of a wafer substrate, and memory cell including a memory device at a backside of a wafer substrate
Taiwan Semiconductor Manufacturing Company, Ltd.
- US 2026/0324295 A1Published 15 Oct 2026Single-Layer FeRh Metamagnetic Material with Exchange Bias
The Government of the United States of America, as represented by the Secretary of the Navy
- US 2026/0324293 A1Published 15 Oct 2026Gaussian bit circuit with multiple mtj cells
Taiwan Semiconductor Manufacturing Company, Ltd.
- US 2026/0324292 A1Published 15 Oct 2026Method of manufacturing magnetoresistive random access memory device including forming protective layer
Samsung Electronics Co., Ltd.
- US 2026/0324059 A1Published 15 Oct 2026Semiconductor devices with gate structures having gate protrusions and data storage systems including the same
Samsung Electronics Co., Ltd.
- US 2026/0324029 A1Published 15 Oct 2026Heterostructures with ferroelectric iii-nitride layer on metal
The Regents of the University of Michigan