H10B 43/50
Eeprom devices comprising charge-trapping gate insulators: characterised by the boundary region between
Official title: characterised by the boundary region between the core and peripheral circuit regions
H10B43/50 (Eeprom devices comprising charge-trapping gate insulators: characterised by the boundary region between) appears on 3,283 US grants and 4,713 published applications in this corpus.
Search patents in H10B- Granted patents
- 3,283
- Published applications
- 4,713
- Assignees
- 122
- Inventors
- 3,683
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2009 | 0 | 9 |
| 2010 | 2 | 22 |
| 2011 | 9 | 31 |
| 2012 | 20 | 38 |
| 2013 | 40 | 46 |
| 2014 | 56 | 72 |
| 2015 | 81 | 104 |
| 2016 | 147 | 179 |
| 2017 | 173 | 214 |
| 2018 | 167 | 200 |
| 2019 | 236 | 316 |
| 2020 | 356 | 456 |
| 2021 | 343 | 479 |
| 2022 | 305 | 534 |
| 2023 | 327 | 509 |
| 2024 | 401 | 620 |
| 2025 | 402 | 519 |
| 2026 | 218 | 365 |
By publication year. 2026 runs to 8 Oct.
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By later US patents
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