Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors

A memory device, comprising:

• at least one alternating stack located over a semiconductor substrate, wherein each of the at least one alternating stack comprises electrically conductive layers and insulator layers that alternate along a direction perpendicular to a top surface of the semiconductor substrate and including stepped surfaces in a contact region;
• an array of memory stack structures located within memory openings which extend through an entirety of the at least one alternating stack;
• at least one additional alternating stack of additional insulating layers and spacer material layers, wherein the spacer material layers have a different composition than the electrically conductive layers;
• at least one epitaxial semiconductor pedestal located in the at least one additional alternating stack, wherein each of the at least one epitaxial semiconductor pedestal is in epitaxial alignment with a single crystalline substrate semiconductor material of the semiconductor substrate;
• and
• at least one semiconductor device located on the at least one epitaxial semiconductor pedestal.