Poly-silicon based word line for 3d memory
AssigneeApplied Materials, Inc. Santa Clara
InventorsChang Seok Kang, Tomohiko Kitajima, Gill Yong Lee
Life of this patent
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Abstract
Memory devices and methods of manufacturing memory devices are provided. The device and methods described decrease the resistivity of word lines by forming word lines comprising low resistivity materials. The low resistivity material has a resistivity in a range of from 5 μcm to 100 μcm. Low resistivity materials may be formed by recessing the word line and selectively growing the low resistivity materials in the recessed portion of the word line. Alternatively, low resistivity materials may be formed by depositing a metal layer and silicidating the metal in the word line region and in the common source line region.
Claims13
A method of forming an electronic device, the method comprising:
- forming a plurality of memory hole channels through a memory stack, the memory stack on a common source line and comprising alternating layers of a silicon word line and a first sacrificial layer, the silicon word line having a first end;
- pattering at least one opening extending through the memory stack, exposing the common source line;
- replacing the first sacrificial layer with an oxide layer;
- and
- forming a low resistivity material on the exposed common source line and on the first end of the silicon word line.
A processing tool comprising:
- a central transfer station comprising a robot configured to move a wafer;
- a plurality of process stations, each process station connected to the central transfer station and providing a processing region separated from processing regions of adjacent process stations, the plurality of process stations comprising one or more of a pre-cleaning chamber, a silicidation chamber, a nitridation chamber, an Ohmic layer deposition chamber, a metal deposition chamber, and an annealing chamber;
- and
- a controller connected to the central transfer station and the plurality of process stations, the controller configured to activate the robot to move the wafer between process stations, and to control a process occurring in each of the process stations.
Dependencies are inferred from the claim text.