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US 2026/0304792 A1Published application
Semiconductor device including laser beam absorption enhancement structures and methods for forming the same
AssigneeSanDisk Technologies LLC
InventorsKento ISERI, Atsushi SHIMIZU, Yuya SANADA
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Abstract
A textured nanopattern is formed over a semiconductor structure. A laser anneal process can be performed by irradiating a laser beam on the textured nanopattern. The textured nanopattern may include semiconductor nanoparticles, such as silicon core and germanium-containing shell nanoparticles. The textured nanopattern enhances an absorption efficiency of the laser beam through at least one optical effect.
Claims20
A three-dimensional memory device, comprising:
- an alternating stack of insulating layers and electrically conductive layers that alternate along a vertical direction;
- memory openings vertically extending through the alternating stack;
- memory opening fill structures located in the memory openings and comprising a respective vertical stack of memory elements and a respective vertical semiconductor channel;
- a dielectric material portion located adjacent to the alternating stack;
- a semiconductor source layer comprising a polycrystalline doped semiconductor material, underlying a bottommost surface of the alternating stack, and contacting a bottom end of the vertical semiconductor channels;
- and
- a textured nanopattern including gaps having a respective gap width in a range from 5 nm to 500 nm.
4 more elements
A method of forming a three-dimensional memory device, comprising:
- forming an alternating stack of insulating layers and spacer material layers over a carrier substrate, wherein the spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers;
- forming a dielectric material portion adjacent to the alternating stack;
- forming memory openings through the alternating stack;
- forming memory opening fill structures in the memory openings, wherein each of the memory opening fill structures comprises a respective vertical stack of memory elements and a respective vertical semiconductor channel;
- removing the carrier substrate;
- forming an unactivated semiconductor layer underneath the bottommost surface of the alternating stack and on bottom surfaces of the vertical semiconductor channels;
- forming a textured nanopattern including gaps having a respective gap width after forming the unactivated semiconductor layer;
- and
- irradiating a laser beam having a peak wavelength greater than the gap width on the unactivated semiconductor layer to convert the unactivated semiconductor into a semiconductor source layer, wherein the textured nanopattern enhances an absorption efficiency of the laser beam through at least one optical effect.
6 more elements
Dependencies are inferred from the claim text.