Semiconductor device having contact pads
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Ji Yeon Baek
Life of this patent
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Abstract
A semiconductor device includes a stacked structure having first conductive layers stacked stepwise and first insulating layers interposed between the first conductive layers, wherein undercuts are formed under the first conductive layers and each of the first conductive layers includes a first region covered by the first conductive layer and a second region extending from the first region, contact pads coupled to the second regions of the respective first conductive layers, and a liner layer formed on the contact pads and filling the undercuts.
Claims10
A semiconductor device, comprising:
- a stacked structure including first conductive layers stacked stepwise and first insulating layers interposed between the stacked first conductive layers, wherein the stacked structure includes a stepped sidewall;
- and
- contact pads formed over the first conductive layers exposed on the stepped sidewall of the stacked structure and electrically coupled to the first conductive layers, respectively, wherein each of the contact pads includes one or more second conductive layers and one or more second insulating layers stacked alternately.
A semiconductor device, comprising:
- a stacked structure including first conductive layers stacked stepwise and first insulating layers interposed between the stacked first conductive layers, wherein each of the first conductive layers includes a first region covered by the first conductive layer located thereover and a second region extending from the first region;
- contact pads electrically coupled to the second regions of the respective first conductive layers;
- and
- a liner layer formed on the contact pads and extends to be interposed under the second region of respective first conductive layers.
A semiconductor device, comprising:
- a first conductive layer including a first contact region;
- a first contact pad electrically coupled to the first contact region of the first conductive layer;
- a second conductive layer located over the first conductive layer, including a second contact region and that is shorter than the first conductive layer to expose the first contact pad;
- a second contact pad coupled to the second contact region of the second conductive layer;
- an insulating layer interposed between the first and second conductive layers and that is shorter than the first and second conductive layers so that an undercut is formed under the second contact region of the second conductive layer;
- and
- a liner layer located on the first and second conductive layers to cover the first and second contact pads and fill the undercut;
- a stacked structure including first conductive layers stacked stepwise and first insulating layers interposed between the stacked first conductive layers, wherein each of the first conductive layers includes a first region covered by the first conductive layer located thereover and a second region extending from the first region;
- contact pads electrically coupled to the second regions of the respective first conductive layers;
- and
- a liner layer formed on the contact pads and extends to be interposed under the second region of respective first conductive layers.
Dependencies are inferred from the claim text.