Three-dimensional memory devices and methods for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKun Zhang, Lei Liu, Tao Yang, Linchun Wu, Wenxi Zhou, Zhiliang Xia, Zongliang Huo
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Abstract
Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a stack structure includes interleaved dielectric layers and conductive layers, a channel structure extending in the stack structure, and a doped semiconductor layer arranged on the stack structure. The doped semiconductor layer covers an end of the channel structure and the stack structure, the channel structure includes a channel layer, and the channel layer includes a doped channel layer.
Claims20
A three-dimensional (3D) memory device, comprising:
- a stack structure comprising interleaved dielectric layers and conductive layers along a first direction;
- a channel structure extending through the stack structure;
- and
- a doped semiconductor layer located on a side of the stack structure in the first direction, wherein the channel structure comprises a channel layer having a doped channel layer and an undoped channel layer,
- wherein the channel structure comprises a filling layer surrounded by the channel layer and an air gap surrounded by the filling layer, and
- the air gap overlaps with the doped channel layer in a plane orthogonal to a second direction, and the second direction is perpendicular to the first direction.
A system, comprising:
- a memory system comprising:
- one or more three-dimensional (3D) memory devices comprising:
- a stack structure comprising interleaved dielectric layers and conductive layers along a first direction;
- a channel structure extending through the stack structure;
- and
- a doped semiconductor layer located on a side of the stack structure in the first direction, wherein the channel structure comprises a channel layer having a doped channel layer and an undoped channel layer,
- wherein the channel structure comprises a filling layer surrounded by the channel layer and an air gap surrounded by the filling layer, and
- the air gap overlaps with the doped channel layer in a plane orthogonal to a second direction, and the second direction is perpendicular to the first direction;
- and
- a memory controller configured to control operations of the 3D memory devices;
- and
- a host configured to send or receive data to or from the 3D memory devices.
Dependencies are inferred from the claim text.