Semiconductor memory device and method for manufacturing same

A semiconductor memory device comprising:

• a base including a substrate and a peripheral circuit formed on a surface of the substrate;
• a stacked body including a plurality of conductive layers and a plurality of insulating layers alternately stacked above the base;
• a memory film provided on an inner wall of a memory hole punched through the stacked body to reach a lowermost layer of the conductive layers and including a charge storage film;
• a channel body provided on an inside of the memory film in the memory hole;
• an interconnection provided below the stacked body, and electrically connecting the lowermost layer of the conductive layers in an interconnection region laid out on an outside of a memory cell array region, wherein the memory cell array region having the memory film and the channel body and the peripheral circuit;
• and
• a contact plug piercing the stacked body in the interconnection region to reach the lowermost layer of the conductive layers in the interconnection region;
• and
• wherein the channel body is formed in a U-shaped configuration including:
• a pair of columns extending in a stack direction of the stacked body;
• and a connection buried in the lowermost layer of the conductive layers in the memory cell array region and connecting the pair of columns.