Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorSeok Hyun LEE
Life of this patent
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Abstract
A semiconductor device includes: a gate structure that includes alternately stacked conductive layers and first insulating layers; a dummy stack adjacent to the gate structure in a first direction and including a first sidewall facing the gate structure, the first sidewall extending in a second direction along a length of the first sidewall and having a repeatedly nonplanar shape, wherein the second direction intersects the first direction; and a second insulating layer located between the gate structure and the dummy stack, wherein the dummy stack is located at a boundary of at least one component of the semiconductor device.
Claims16
A semiconductor device comprising:
- a gate structure including alternately stacked conductive layers and first insulating layers;
- a dummy stack adjacent to the gate structure in a first direction and including a first sidewall facing the gate structure, the first sidewall extending in a second direction along a length of the first sidewall and having a repeatedly nonplanar shape, wherein the second direction intersects the first direction;
- and
- a second insulating layer located between the gate structure and the dummy stack,
- wherein the dummy stack is located at a boundary of at least one component of the semiconductor device.
A semiconductor device comprising:
- a first gate structure including alternately stacked first conductive layers and first insulating layers;
- a second gate structure adjacent to the first gate structure in a first direction and including alternately stacked second conductive layers and second insulating layers;
- a dummy stack located between the first gate structure and the second gate structure, and including alternately stacked third insulating layers and fourth insulating layers, and including a first sidewall facing the first gate structure, the first sidewall extending in a second direction along a length of the first sidewall and deviating and extending from the second direction in some regions, wherein the second direction intersects the first direction;
- a peripheral circuit;
- and
- a bonding structure located between the peripheral circuit and the dummy stack.
Dependencies are inferred from the claim text.