H10B 43/20
Eeprom devices comprising charge-trapping gate insulators: characterised by three-dimensional [3d] arrangements
Official title: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
H10B43/20 (Eeprom devices comprising charge-trapping gate insulators: characterised by three-dimensional [3d] arrangements) appears on 10,461 US grants and 13,930 published applications in this corpus.
Search patents in H10B- Granted patents
- 10,461
- Published applications
- 13,930
- Assignees
- 337
- Inventors
- 8,134
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 0 | 1 |
| 2002 | 0 | 1 |
| 2003 | 0 | 3 |
| 2004 | 0 | 5 |
| 2005 | 5 | 2 |
| 2006 | 3 | 10 |
| 2007 | 4 | 11 |
| 2008 | 4 | 24 |
| 2009 | 12 | 60 |
| 2010 | 26 | 125 |
| 2011 | 73 | 177 |
| 2012 | 125 | 258 |
| 2013 | 213 | 310 |
| 2014 | 330 | 369 |
| 2015 | 439 | 505 |
| 2016 | 577 | 649 |
| 2017 | 670 | 772 |
| 2018 | 596 | 614 |
| 2019 | 683 | 870 |
| 2020 | 949 | 1203 |
| 2021 | 987 | 1420 |
| 2022 | 931 | 1475 |
| 2023 | 1001 | 1430 |
| 2024 | 1125 | 1423 |
| 2025 | 1020 | 1229 |
| 2026 | 688 | 984 |
By publication year. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Control gate signal for data retention in nonvolatile memory6 Oct 2026US 12,755,789 B2SanDisk Technologies LLC
- Three-dimensional memory device including dipole-containing blocking dielectric layer and methods for forming the same6 Oct 2026US 12,757,392 B2SanDisk Technologies LLC
- Memory array and method used in forming a memory array comprising strings of memory cells6 Oct 2026US 12,757,393 B2Micron Technology, Inc.
- Method for manufacturing oxide film, method for manufacturing semiconductor memory device, semiconductor device, and semiconductor memory device6 Oct 2026US 12,757,396 B2Kioxia Corporation
- Semiconductor memory device and method of manufacturing the semiconductor memory device6 Oct 2026US 12,757,397 B2SK hynix Inc.
- Memory device and method for manufacturing the same8 Oct 2026US 2026/0311729 A1Macronix International Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device8 Oct 2026US 2026/0311730 A1SK hynix Inc.
- Memory structure, memory device and operating method thereof8 Oct 2026US 2026/0311763 A1Macronix International Co., Ltd.
- Three-dimensional memory devices and methods for forming the same8 Oct 2026US 2026/0313889 A1Yangtze Memory Technologies Co., Ltd.
- Integrated Assemblies Having Conductive Posts Extending Through Stacks of Alternating Materials8 Oct 2026US 2026/0313890 A1Lodestar Licensing Group LLC
Most cited
By later US patents
- Vertical-type non-volatile memory devices657US 7,679,133 B2Samsung Electronics Co., Ltd. · 2010
- Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same613US 8,654,587 B2Samsung Electronics Co., Ltd. · 2014
- Non-volatile memory device, erasing method thereof, and memory system including the same608US 8,553,466 B2Samsung Electronics Co., Ltd. · 2013
- Methods for depositing silicon oxide501US 9,685,320 B2Lam Research Corporation · 2017
- Integrated circuits having a contact region and methods for manufacturing the same490US 7,915,667 B2Qimonda AG · 2011