Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChiWeon Yoon, Donghyuk Chae, Sang-Wan Nam, Sung-Won Yun
Life of this patent
Estimating the term…
Abstract
Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.
Claims6
A program method of a non-volatile memory device which includes groups of memory cells sequentially provided in a direction vertical to a substrate and in which at least two strings are connected to one bit line, the program method comprising:
- performing a bit line setup operation together with a channel boosting operation;
- and
- performing a program execution operation by applying a program voltage to a selected word line,
- wherein the performing a bit line setup operation includes, during a first bit line setup period, applying a power supply voltage to unselected bit lines, floating all strings of a selected memory block, and applying a pass voltage to the selected word line and unselected word lines, and
- wherein the floating of the strings of the selected memory block includes applying a ground voltage to a ground selection line and to all string selection lines.
A program method of a non-volatile memory device which includes groups of memory cells sequentially provided in a direction vertical to a substrate and in which at least two strings are connected to one bit line, the program method comprising:
- performing a bit line setup operation together with a channel boosting operation;
- and
- performing a program execution operation by applying a program voltage to a selected word line,
- wherein the performing a bit line setup operation includes, during a first bit line setup period, applying a power supply voltage to all bit lines and all string selection lines, and applying a ground voltage to a ground selection line, and
- wherein the performing a bit line setup operation includes applying, during the first bit line setup period, the ground voltage to at least one unselected string selection line.
Dependencies are inferred from the claim text.