H10B 53/00
Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors
Official title: Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
H10B53/00 (Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors) appears on 2,990 US grants and 3,275 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,990
- Published applications
- 3,275
- Assignees
- 357
- Inventors
- 3,220
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 3 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 7 | 0 |
| 1992 | 11 | 0 |
| 1993 | 17 | 0 |
| 1994 | 19 | 0 |
| 1995 | 28 | 0 |
| 1996 | 35 | 0 |
| 1997 | 27 | 0 |
| 1998 | 46 | 0 |
| 1999 | 46 | 0 |
| 2000 | 67 | 0 |
| 2001 | 93 | 53 |
| 2002 | 97 | 137 |
| 2003 | 127 | 159 |
| 2004 | 140 | 208 |
| 2005 | 148 | 186 |
| 2006 | 133 | 185 |
| 2007 | 105 | 149 |
| 2008 | 87 | 137 |
| 2009 | 87 | 97 |
| 2010 | 83 | 84 |
| 2011 | 79 | 45 |
| 2012 | 47 | 50 |
| 2013 | 53 | 39 |
| 2014 | 49 | 29 |
| 2015 | 27 | 43 |
| 2016 | 37 | 45 |
| 2017 | 54 | 55 |
| 2018 | 71 | 94 |
| 2019 | 82 | 96 |
| 2020 | 101 | 141 |
| 2021 | 126 | 171 |
| 2022 | 156 | 193 |
| 2023 | 190 | 277 |
| 2024 | 201 | 239 |
| 2025 | 173 | 217 |
| 2026 | 131 | 146 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10B 53/30Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the memory2,055
- H10B 53/20Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the three-dimensional365
- H10B 53/40Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the peripheral350
- H10B 53/10Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the top-view181
- H10B 53/50Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the boundary52
Recent patents
- Memory structure and method of forming the same6 Oct 2026US 12,757,406 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Replacement electrode process for 3D ferroelectric memory6 Oct 2026US 12,757,407 B2Intel Corporation
- Ferroelectric memory architecture with gap region6 Oct 2026US 12,757,408 B2Micron Technology, Inc.
- Ferroelectric tunnel junction devices for low voltage and low temperature operation6 Oct 2026US 12,757,474 B2Intel Corporation
- Thin film transistors and related fabrication techniques29 Sep 2026US 12,751,044 B2Micron Technology, Inc.
- Metal oxide film, semiconductor device, and manufacturing method thereof8 Oct 2026US 2026/0313909 A1
- Ferroelectric memory device comprising a chimney seed structure8 Oct 2026US 2026/0313910 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric devices and methods of forming the same8 Oct 2026US 2026/0313911 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory cell, memory device, and methods thereof8 Oct 2026US 2026/0313912 A1Ferroelectric Memory GmbH
- Memory device assembly with a leaker device1 Oct 2026US 2026/0304782 A1Micron Technology, Inc.
Most cited
By later US patents
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition442US 6,110,531 ASymetrix Corporation · 2000
- Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current416US 5,519,234 ASymetrix Corporation · 1996
- Method for fabricating programmable memory array structures incorporating series-connected transistor strings395US 7,005,350 B2Matrix Semiconductor, Inc. · 2006
- Integrated circuit and method252US 6,211,035 B1Texas Instruments Incorporated · 2001