H10B 53/20
Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the three-dimensional
Official title: characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
H10B53/20 (Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the three-dimensional) appears on 365 US grants and 467 published applications in this corpus.
Search patents in H10B- Granted patents
- 365
- Published applications
- 467
- Assignees
- 56
- Inventors
- 587
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 2 | 4 |
| 2011 | 0 | 0 |
| 2012 | 0 | 3 |
| 2013 | 1 | 0 |
| 2014 | 1 | 2 |
| 2015 | 4 | 7 |
| 2016 | 6 | 10 |
| 2017 | 11 | 11 |
| 2018 | 16 | 23 |
| 2019 | 22 | 25 |
| 2020 | 31 | 43 |
| 2021 | 37 | 39 |
| 2022 | 46 | 43 |
| 2023 | 50 | 68 |
| 2024 | 57 | 74 |
| 2025 | 40 | 65 |
| 2026 | 41 | 47 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Replacement electrode process for 3D ferroelectric memory6 Oct 2026US 12,757,407 B2Intel Corporation
- Thin film transistors and related fabrication techniques29 Sep 2026US 12,751,044 B2Micron Technology, Inc.
- Ferroelectric oxide- and ferroelectric monochalcogenide-based capacitors22 Sep 2026US 12,745,403 B2Intel Corporation
- Programmable capacitor memory arrays with stacked access transistors8 Sep 2026US 12,733,177 B2Intel Corporation
- Method of fabricating a memory device by wafer bonding25 Aug 2026US 12,720,757 B1Kepler Computing Inc.
- Semiconductor device1 Oct 2026US 2026/0304800 A1SK hynix Inc.
- Embedded ferroelectric capacitors in the back end of line for ferroelectric random access memory1 Oct 2026US 2026/0305320 A1Intel Corporation
- Cross-point memory array with access lines24 Sep 2026US 2026/0293158 A1Micron Technology, Inc.
- Memory device having ferroelectric layer17 Sep 2026US 2026/0282380 A1Taiwan Semiconductor Manufacturing Company.Ltd
- 3d ferroelectric memory device17 Sep 2026US 2026/0282383 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Memory cell and an array of memory cells101US 9,472,560 B2Micron Technology, Inc. · 2016
- Memory arrays86US 10,607,995 B2Micron Technology, Inc. · 2020
- Ferroelectric memory cells78US 10,354,712 B2Micron Technology, Inc. · 2019
- Three-dimensional ferroelectric memory devices53US 10,403,631 B1Wuxi Petabyte Technologies Co., Ltd. · 2019
- Artificial intelligence processor with three-dimensional stacked memory53US 11,139,270 B2Kepler Computing Inc. · 2021