Semiconductor device

A semiconductor device comprising:

• a first electrode and a second electrode;
• a ferroelectric layer disposed between the first electrode and the second electrode, the ferroelectric layer including a first ferroelectric layer and a second ferroelectric layer spaced apart from each other;
• a domain separation layer disposed between the first ferroelectric layer and the second ferroelectric layer;
• a first polarization control layer disposed between the first electrode and the first ferroelectric layer;
• and
• a second polarization control layer disposed between the second electrode and the second ferroelectric layer,
• wherein each of the first polarization control layer and the second polarization control layers has an oxygen area density different from an oxygen area density of the first ferroelectric layer and an oxygen area density of the second ferroelectric layer.

A semiconductor device comprising:

• a substrate including an active region;
• a lower electrode contact plug connected to the active region;
• a lower electrode connected to the lower electrode contact plug;
• an upper electrode disposed over the lower electrode;
• a ferroelectric layer disposed between the lower electrode and the upper electrode;
• a first polarization control layer disposed between the lower electrode and the ferroelectric layer;
• and
• a second polarization control layer disposed between the upper electrode and the ferroelectric layer,
• wherein an oxygen area density of the ferroelectric layer is between an oxygen area density of the first polarization control layer and an oxygen area density of the second polarization control layer.