Kepler Computing Inc.
San Francisco, CA, US· latest recorded location
Kepler Computing Inc. is named on 302 US grants and 94 published applications in this corpus. Its most frequent classification is H10D (Inorganic electric semiconductor devices).
- Granted patents
- 302
- Published applications
- 94
- Inventors
- 48
- Granted in 2026 so far
- 23
- Most recent grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2020 | 1 | 11 |
| 2021 | 11 | 14 |
| 2022 | 53 | 10 |
| 2023 | 88 | 36 |
| 2024 | 72 | 16 |
| 2025 | 54 | 7 |
| 2026 | 23 | 0 |
By publication year. 2026 runs to 8 Oct.
Technology areas
Share of 396 documents
- H10DInorganic electric semiconductor devices309
- H10BElectronic memory devices287
- G11CStatic stores227
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by126
- H03KPulse technique118
- G06FComputing and data processing94
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered59
- H10NElectric solid-state devices not otherwise provided for40
- Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information38
- G06NAI and machine learning31
Recent patents
- Split memory array to reduce bit-line capacitance15 Sep 2026US 12,740,066 B1
- Etch stop layer based integration process for embedded memory1 Sep 2026US 12,727,165 B1
- Method of forming ferroelectric chiplet in a multi-dimensional packaging with I/O switch embedded in a substrate or interposer25 Aug 2026US 12,717,479 B2
- Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor25 Aug 2026US 12,718,860 B2
- Method of fabricating a memory device by wafer bonding25 Aug 2026US 12,720,757 B1
- Doped polar layers and semiconductor device incorporating same30 Oct 2025US 2025/0338552 A1
- High bandwidth three-dimensional system-on-chip10 Jul 2025US 2025/0225095 A1
- Three-dimensional stack of heterogeneous memory and compute dies19 Jun 2025US 2025/0201778 A1
- Pillar capacitor structure for high density memory applications22 May 2025US 2025/0169078 A1
- Planar ferroelectric memory device30 Jan 2025US 2025/0040146 A1
Most cited
By later US patents
- High-density low voltage non-volatile differential memory bit-cell with shared plate line76US 10,847,201 B22020
- Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic74US 11,482,270 B12022
- Doped polar layers and semiconductor device incorporating same64US 11,164,976 B22021
- Low power ferroelectric based majority logic gate adder56US 10,944,404 B12021
- Artificial intelligence processor with three-dimensional stacked memory53US 11,139,270 B22021