Method of forming ferroelectric chiplet in a multi-dimensional packaging with I/O switch embedded in a substrate or interposer

A method comprising:

• forming a first die comprising a processor, wherein the first die includes a first plurality of input-output transceivers;
• forming a second die comprising a memory chiplet, wherein the memory chiplet is coupled to the first die via I/Os;
• forming an interposer comprising a switch and a second plurality of input-output transceivers;
• and
• coupling the first plurality of input-output transceivers to the second plurality of input-output transceivers.

A method comprising:

• forming a first memory comprising non-volatile memory (NVM) cells;
• forming a second memory, wherein the first memory is coupled to the second memory;
• forming a third memory coupled to the first memory;
• coupling a first processor to the second memory;
• and
• coupling a second processor to the third memory and the first processor, wherein forming the second processor comprises:
• forming a first die comprising a processor, wherein the first die includes a first plurality of input-output transceivers;
• forming a second die comprising a memory chiplet, wherein the memory chiplet is coupled to the first die via I/Os;
• forming an interposer comprising a switch and a second plurality of input-output transceivers;
• and
• coupling the first plurality of input-output transceivers to the second plurality of input-output transceivers.