Artificial intelligence processor with three-dimensional stacked memory

A system comprising:

• a first memory comprising non-volatile memory cells;
• a second memory comprising dynamic random-access memory (DRAM), wherein the first memory is coupled to the second memory;
• a third memory comprising ferroelectric random-access memory (FeRAM), wherein the third memory is coupled to the first memory;
• a first processor coupled to the second memory;
• and
• a second processor coupled to the third memory and the first processor, wherein the second processor comprises:
• a substrate having a top surface;
• a first die directly coupled to the top surface of the substrate through bumps or vias, wherein the first die comprises a ferroelectric random-access memory (FeRAM) having bit-cells, wherein each bit-cell comprises an access transistor and a capacitor including ferroelectric material, wherein the access transistor is coupled to the ferroelectric material;
• and
• a second die vertically stacked over the first die, wherein the second die comprises a multiplier coupled to the FeRAM of the first die.

A system comprising:

• a first memory comprising non-volatile memory cells;
• a second memory comprising dynamic random-access memory (DRAM), wherein the first memory is coupled to the second memory;
• a third memory comprising ferroelectric random-access memory (FeRAM), wherein the third memory is coupled to the first memory;
• a first processor coupled to the second memory;
• and
• a second processor coupled to the third memory and the first processor, wherein the second processor comprises:
• an interposer having a top surface;
• a first die directly on the top surface of the interposer through bumps or vias, wherein the first die comprises a random-access-memory (RAM) having bit-cells;
• and
• a second die stacked vertically over the first die, wherein the second die comprises a matrix multiplier coupled to the RAM of the first die.