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US 2025/0169078 A1Published application
Pillar capacitor structure for high density memory applications
AssigneeKepler Computing Inc.
InventorsGaurav Thareja, Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya
Life of this patent
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Abstract
The memory bit-cell formed using the ferroelectric capacitor results in a taller and narrower bit-cell compared to traditional memory bit-cells. As such, more bit-cells can be packed in a die resulting in a higher density memory that can operate at lower voltages than traditional memories while providing the much sought after non-volatility behavior. The pillar capacitor includes a plug that assists in fabricating a narrow pillar.
Claims20
An apparatus comprising:
- an electrode structure within a first level, the electrode structure comprising a first height;
- a pillar capacitor on the electrode structure, the pillar capacitor comprising:
- a structure above the electrode structure, the structure comprising a first dielectric and a plug above the first dielectric;
- a first electrode comprising first portions on first sidewalls of the structure and a base portion, wherein the first portions and the base portion are connected;
- a second electrode on second sidewalls of the first electrode;
- a second dielectric comprising a non-linear polar material on third sidewalls of the second electrode;
- a third electrode on fourth sidewalls of the second dielectric;
- and
- a fourth electrode adjacent to fifth sidewalls of the third electrode, wherein the pillar capacitor comprises a second height, and wherein the second height is greater than the first height;
- and
- a via electrode coupled with the fourth electrode.
8 more elements
An apparatus comprising:
- a first electrode structure and a second electrode structure within a first level, wherein each of the first electrode structure and the second electrode structure comprises a first height;
- a first pillar capacitor on the first electrode structure and a second pillar capacitor on the second electrode structure, wherein each of the first pillar capacitor and the second pillar capacitor comprises:
- a structure comprising a first dielectric and a plug above the first dielectric;
- a first electrode comprising first portions on first sidewalls of the structure and a base portion, wherein the first portions and the base portion are connected;
- an etch stop layer adjacent to the first portions;
- a second electrode on second sidewalls of the first electrode;
- a second dielectric comprising a non-linear polar material on third sidewalls of the second electrode;
- a third electrode on fourth sidewalls of the second dielectric;
- and
- a fourth electrode adjacent to fifth sidewalls of the third electrode, wherein each of the first pillar capacitor and the second pillar capacitor comprise a second height, and wherein the second height is greater than the first height;
- and
- a first via electrode coupled with the fourth electrode of the first pillar capacitor, and a second via electrode coupled with the fourth electrode of the second pillar capacitor.
9 more elements
A system comprising:
- a transistor comprising a source, a drain and a gate;
- a capacitor structure coupled with the drain of the transistor, the capacitor structure comprising:
- an electrode structure within a first level, the electrode structure comprising a first height;
- a pillar capacitor on the electrode structure, the pillar capacitor comprising:
- a structure above the electrode structure, the structure comprising a first dielectric and a plug above the first dielectric;
- a first electrode comprising first portions on first sidewalls of the structure and a base portion between the first dielectric and the electrode structure, wherein the first portions and the base portion are connected;
- an etch stop layer adjacent to the first portions;
- a second electrode on second sidewalls of the first electrode;
- a second dielectric comprising a non-linear polar material on third sidewalls of the second electrode;
- a third electrode on fourth sidewalls of the second dielectric;
- and
- a fourth electrode adjacent to fifth sidewalls of the third electrode, wherein the pillar capacitor comprises a second height, and wherein the second height is greater than the first height;
- and
- a via electrode coupled with the third electrode.
11 more elements
Dependencies are inferred from the claim text.