Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of:

• (a) providing:
• a liquid precursor suitable for forming said compound;
• and a deposition reactor containing a substrate;
• said liquid precursor comprising at least one metal polyalkoxide compound containing said at least two metals, said at least two metals selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium;
• (b) forming a mist of said liquid precursor using a venturi mister;
• (c) gasifying said mist to form a gasified precursor;
• (d) flowing said gasified precursor into said deposition reactor;
• (e) reacting said gasified precursor in said deposition reactor to form said thin film of said complex compound on said substrate;
• and
• (f) completing said integrated circuit to include at least a portion of said thin film in an active component of said integrated circuit.

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of:

• (a) providing:
• a liquid precursor suitable for forming said compound;
• and a deposition system comprising a first chamber, a deposition chamber containing a substrate, and a showerhead separating said first chamber and said deposition chamber;
• wherein said liquid precursor comprises at least one metal polyalkoxide compound containing said at least two metals, said at least two metals selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium;
• (b) forming a mist of said liquid precursor;
• (c) gasifying said mist to form a gasified precursor;
• (d) flowing said gasified precursor through said showerhead into said deposition reactor;
• (e) reacting said gasified precursor in said deposition reactor to form said thin film on said substrate;
• and
• (f) completing said integrated circuit to include at least a portion of said thin film of said layered superlattice material compound in an active component of said integrated circuit.

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of:

• (a) providing a plurality of liquid precursors each containing a metal compound containing at least one of said two metals, wherein said at least two metals are selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium;
• (b) forming a mist of each of said liquid precursors;
• (c) mixing said mists to create a combined mist;
• (d) gasifying said combined mist to form a gasified precursor;
• (e) transporting said gasified precursor to a deposition reactor using at least one carrier gas;
• and
• (f) reacting said gasified precursor in said deposition reactor to form said thin film on said substrate;
• and
• (i) completing said integrated circuit to include at least a portion of said thin film of said compound in an active component of said integrated circuit.

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of:

• (a) providing a plurality of liquid precursors suitable for forming said compound;
• and a deposition reactor containing a substrate wherein said at least two metals are contained in said liquid precursors and selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium;
• (b) flowing said liquid precursors at controlled flow rates to a mixer;
• (c) mixing said liquid precursors to form a combined liquid precursor just prior to forming a mist;
• (d) forming a mist of said combined liquid precursor;
• (e) gasifying said mist to form a gasified precursor;
• (f) flowing said gasified precursor into said deposition reactor;
• and
• (g) reacting said gasified precursor in said deposition reactor to form said thin film of said compound on said substrate.