H10B 53/10
Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the top-view
Official title: characterised by the top-view layout
H10B53/10 (Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the top-view) appears on 181 US grants and 255 published applications in this corpus.
Search patents in H10B- Granted patents
- 181
- Published applications
- 255
- Assignees
- 45
- Inventors
- 421
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2008 | 0 | 2 |
| 2009 | 0 | 5 |
| 2010 | 2 | 5 |
| 2011 | 4 | 5 |
| 2012 | 1 | 3 |
| 2013 | 3 | 2 |
| 2014 | 4 | 4 |
| 2015 | 3 | 3 |
| 2016 | 3 | 3 |
| 2017 | 2 | 2 |
| 2018 | 8 | 11 |
| 2019 | 6 | 7 |
| 2020 | 12 | 19 |
| 2021 | 15 | 24 |
| 2022 | 27 | 18 |
| 2023 | 14 | 43 |
| 2024 | 26 | 35 |
| 2025 | 31 | 36 |
| 2026 | 20 | 28 |
By publication year. 2026 runs to 8 Oct.
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By later US patents
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