Semiconductor device, memory device, electronic device, and processing device

A processing device comprising:

• a processing portion;
• a sense amplifier;
• and
• a memory cell,
• wherein the memory cell is positioned above the processing portion and the sense amplifier,
• wherein the memory cell is configured to retain data related to a task processed in the processing portion,
• wherein the sense amplifier is configured to read the data retained in the memory cell,
• wherein the memory cell comprises a transistor and a capacitor,
• wherein the transistor is positioned above the capacitor,
• wherein the transistor comprises:
• a first conductive layer configured to function as one of a source and a drain, drain of the transistor;
• a semiconductor layer comprising a channel formation region of the transistor;
• a second conductive layer configured to function as the other of the source and the drain of the transistor;
• a first insulating layer configured to function as a gate insulating film of the transistor;
• and
• a third conductive layer configured to function as a gate of the transistor,
• wherein the second conductive layer is positioned above the first conductive layer with a second insulating layer therebetween,
• wherein, in a cross-sectional view, the second insulating layer and the second conductive layer comprise a first opening reaching the first conductive layer,
• wherein the semiconductor layer comprises a region in contact with a side surface of each of the second insulating layer and the second conductive layer in the first opening, a region in contact with a top surface of the first conductive layer bottom portion of in the first opening, and a region in contact with a top surface of the second conductive layer,
• wherein the first insulating layer comprises a region in contact with a top surface of the semiconductor layer and a region in contact with a top surface of the second insulating layer,
• wherein the third conductive layer positioned above the first insulating layer comprises a region overlapping with the first opening and the semiconductor layer,
• wherein, in the cross-sectional view, the capacitor comprises:
• a first capacitor region in a second opening provided in a third insulating layer positioned below the second insulating layer;
• and
• a second capacitor region in a region overlapping with a top surface of the third insulating layer,
• wherein the first conductive layer is configured to function as one electrode of a pair of electrodes of the capacitor in each of the first capacitor region and the second capacitor region, and
• wherein, in the cross-sectional view, the first opening comprises a region overlapping with at least the part of the first conductive layer that is included in the second capacitor region.