Semiconductor device including a metal oxide interface layer and methods for forming the same

A method of forming a device structure, the method comprising:

• forming a continuous dielectric layer over a substrate;
• forming a continuous metal layer by performing a physical vapor deposition process;
• converting the continuous metal layer into a continuous dielectric metal oxide layer by performing a thermal anneal in an oxidizing ambient, performing an ozonated deionized water treatment process, or performing a direct ozone plasma treatment;
• depositing a continuous semiconductor layer over the continuous dielectric metal oxide layer;
• and
• patterning the continuous semiconductor layer, the continuous dielectric metal oxide layer, and the continuous dielectric layer to form a patterned layer stack including a dielectric layer, a dielectric metal oxide layer, and a semiconductor layer.

A method of forming a device structure, the method comprising:

• forming a layer stack comprising a continuous bottom electrode material layer, a continuous dielectric layer, and a continuous metal layer;
• converting the continuous metal layer into a continuous dielectric metal oxide layer;
• depositing a continuous semiconductor layer over the continuous dielectric metal oxide layer;
• patterning the continuous semiconductor layer and the layer stack to form a patterned layer stack including a bottom electrode, a dielectric layer, a dielectric metal oxide layer, and a semiconductor layer;
• and
• forming a pair of metallic contact structures on the dielectric metal oxide layer by etching a pair of via cavities through the semiconductor layer such that bottom surfaces of the pair of via cavities are formed on a top surface of the dielectric metal oxide layer, within the dielectric metal oxide layer, or on a top surface of the dielectric layer, wherein the pair of metallic contact structures are laterally spaced apart by a portion of the dielectric metal oxide layer.