Semiconductor storage device and method of manufacturing semiconductor storage device

Abstract

There is provided a semiconductor storage device that is allowed to obtain a sufficient margin for operation. The semiconductor storage device includes: a field-effect transistor; an interlayer insulating film; a contact; a first wiring layer; a first insulating layer; an opening section; and a ferroelectric capacitor. The field-effect transistor is provided in a semiconductor substrate. The interlayer insulating film is provided on the semiconductor substrate. The contact penetrates the interlayer insulating film and is electrically coupled to a drain of the field-effect transistor. The first wiring layer is provided on the contact. The first insulating layer is provided on the interlayer insulating film and has the first wiring layer buried therein. The opening section is provided in the first insulating layer and the interlayer insulating film from a layer upper than the first wiring layer. The ferroelectric capacitor is provided in the opening section and electrically coupled to a source of the field-effect transistor.

Dependencies are inferred from the claim text.