H10B 53/40
Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the peripheral
Official title: characterised by the peripheral circuit region
H10B53/40 (Ferroelectric ram [feram] devices comprising ferroelectric memory capacitors: characterised by the peripheral) appears on 350 US grants and 372 published applications in this corpus.
Search patents in H10B- Granted patents
- 350
- Published applications
- 372
- Assignees
- 60
- Inventors
- 450
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 2 | 1 |
| 2002 | 6 | 6 |
| 2003 | 1 | 6 |
| 2004 | 6 | 5 |
| 2005 | 9 | 11 |
| 2006 | 2 | 11 |
| 2007 | 6 | 8 |
| 2008 | 8 | 14 |
| 2009 | 8 | 16 |
| 2010 | 8 | 16 |
| 2011 | 11 | 7 |
| 2012 | 7 | 11 |
| 2013 | 12 | 8 |
| 2014 | 11 | 5 |
| 2015 | 5 | 6 |
| 2016 | 6 | 2 |
| 2017 | 2 | 2 |
| 2018 | 6 | 6 |
| 2019 | 6 | 14 |
| 2020 | 21 | 26 |
| 2021 | 23 | 28 |
| 2022 | 26 | 37 |
| 2023 | 57 | 43 |
| 2024 | 42 | 33 |
| 2025 | 38 | 26 |
| 2026 | 21 | 24 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric memory architecture with gap region6 Oct 2026US 12,757,408 B2Micron Technology, Inc.
- Thin film transistors and related fabrication techniques29 Sep 2026US 12,751,044 B2Micron Technology, Inc.
- Split memory array to reduce bit-line capacitance15 Sep 2026US 12,740,066 B1Kepler Computing Inc.
- Method of fabricating a memory device by wafer bonding25 Aug 2026US 12,720,757 B1Kepler Computing Inc.
- Ferroelectric memory device comprising a chimney seed structure and method for forming the same25 Aug 2026US 12,720,762 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric memory device comprising a chimney seed structure8 Oct 2026US 2026/0313910 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and electronic device17 Sep 2026US 2026/0282379 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor Device And Method For Manufacturing The Semiconductor Device10 Sep 2026US 2026/0271340 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device3 Sep 2026US 2026/0262261 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor pillar landing area6 Aug 2026US 2026/0231399 A1Micron Technology, Inc.
Most cited
By later US patents
- FeRAM capacitor post stack etch clean/repair172US 6,656,748 B2Texas Instruments Incorporated · 2003
- Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic74US 11,482,270 B1Kepler Computing Inc. · 2022
- Artificial intelligence processor with three-dimensional stacked memory53US 11,139,270 B2Kepler Computing Inc. · 2021
- Single transistor rare earth manganite ferroelectric nonvolatile memory cell49US 7,030,435 B2COVA Technologies, Inc. · 2006
- Hydrogen barrier for ferroelectric capacitors34US 8,440,508 B2Texas Instruments Incorporated · 2013