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US 7,030,435 B2Granted
Single transistor rare earth manganite ferroelectric nonvolatile memory cell
AssigneeCOVA Technologies, Inc.
InventorFred P. Gnadinger
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Abstract
A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same.
Claims9
A memory device comprising:
- a substrate;
- a ferroelectric layer, said layer being a film of rare earth manganite;
- and
- an interfacial oxide layer being positioned between the substrate and the ferroelectric layer,
- wherein the ferroelectric layer has the general formula A3+MnOx in which A=Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu and x is between 1 and 3 inclusive.
2 more elements
Dependencies are inferred from the claim text.