Semiconductor pillar landing area

An integrated assembly, comprising:

• a first cell contact pillar extending vertically from a substrate;
• a second cell contact pillar extending vertically from the substrate;
• a first epitaxial structure extending vertically from an upper surface of the first cell contact pillar;
• a second epitaxial structure extending vertically from an upper surface of the second cell contact pillar;
• and
• a void region between the first epitaxial structure and the second epitaxial structure.

A method, comprising:

• forming a first semiconductor pillar extending vertically from a substrate;
• forming a second semiconductor pillar extending vertically from the substrate;
• forming a first epitaxial structure extending vertically from the first semiconductor pillar and a second epitaxial structure extending vertically from the second semiconductor pillar;
• and
• forming a nitride layer over the first epitaxial structure and the second epitaxial structure, wherein the nitride layer comprises a bridge portion extending between a side portion of the first epitaxial structure and a side portion of the second epitaxial structure.