Ferroelectric memory architecture with gap region
AssigneeMicron Technology, Inc.
InventorsGiorgio Servalli, Marcello Mariani
Life of this patent
Estimating the term…
Abstract
Methods, systems, and devices for a ferroelectric memory architecture are described. A memory architecture may include a gap region between memory cells to reduce a capacitance between plates coupled with the memory cells. The gap region may include a fluid, such as air, which may have a relatively low dielectric constant to reduce a capacitance between plates and reduce (e.g., eliminate) undesirable coupling between plates during memory operations. Implementing the gap region between memory cells enables a memory device to increase speed and reduce resource consumption associated with memory operations.
Claims18
An apparatus, comprising:
- a first memory cell comprising a first capacitor, the first memory cell coupled with a first access line and a first plate line;
- a second memory cell comprising a second capacitor, the second memory cell coupled with a second access line and a second plate line;
- a first sidewall around the first capacitor and a second sidewall around the second capacitor, the first sidewall and the second sidewall each comprising a first dielectric material, and the first sidewall and the second sidewall separated by a gap region between the first sidewall and the second sidewall;
- and
- a cap over the first sidewall, the second sidewall, and the gap region, the cap comprising a second dielectric material in contact with the first sidewall and the second sidewall.
An apparatus, comprising:
- a first pair of memory cells configured to store a single logic state and comprising a first memory cell and a second memory cell;
- a second pair of memory cells configured to store a single logic state and comprising a third memory cell and a fourth memory cell;
- a first sidewall and a second sidewall between the first pair of memory cells and the second pair of memory cells, the first and second sidewalls comprising a first dielectric material and separated by a gap region;
- and
- a cap over the first sidewall, the second sidewall, and the gap region, the cap comprising a second dielectric material.
Dependencies are inferred from the claim text.